Nanoscale Stress Localization Effects on the Radiation Susceptibility of GaN High‐Mobility Transistors

Nanoscale localized mechanical stress fields develop unavoidably in microelectronic devices due to structural and processing aspects. Their global average is too small influence bandgap or mobility, but we propose that localization can defect nucleation sites under radiation. This investigated on gallium nitride high electron mobility transistors (GaN HEMTs). Using transmission microscopy, spatially resolved the field AlGaN layer only for both pristine 10 Mrad gamma-irradiated HEMTs. Our quantitative nanobeam diffraction geometric phase analysis indicate tensile stressed localizations experience higher radiation-induced strain. finding explained by dependence of carrier concentration layer. Since gamma radiation damage inflicted energy electrons only, regions are expected be more susceptible rays. article protected copyright. All rights reserved.